1 - 4 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 10n100 10 a 12n100 12 a i dm t c = 25 c, pulse width limited by t jm 10n100 40 a 12n100 48 a p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13/10 nm/lb.in. weight to-204 = 18 g, to-247 = 6 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s to-247 ad (ixth) megamos tm fet n-channel enhancement mode to-204 aa (ixtm) v dss i d25 r ds(on) ixth / ixtm 10n100 1000 v 10 a 1.20 ? ? ? ? ? ixth / ixtm 12n100 1000 v 12 a 1.05 ? ? ? ? ? g = gate, d = drain, s = source, tab = drain g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 1000 v v gs(th) v ds = v gs , i d = 250 a 2 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 ? v dss t j = 25 c 250 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 10n100 1.20 ? 12n100 1.05 ? pulse test, t 300 s, duty cycle d 2 % 91540e(5/96) features l international standard packages l low r ds (on) hdmos tm process l rugged polysilicon gate cell structure l low package inductance (< 5 nh) - easy to drive and to protect l fast switching times applications l switch-mode and resonant-mode power supplies l motor controls l uninterruptible power supplies (ups) l dc choppers advantages l easy to mount with 1 screw (to-247) (isolated mounting screw hole) l space savings l high power density d (tab) ixys reserves the right to change limits, test conditions, and dimensions.
2 - 4 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 6 12 s c iss 4000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 310 pf c rss 70 pf t d(on) 21 50 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 33 50 ns t d(off) r g = 2 ?, (external) 62 100 ns t f 32 50 ns q g(on) 150 170 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 30 45 nc q gd 55 80 nc r thjc 0.42 k/w r thck 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 10n100 10 a 12n100 12 a i sm repetitive; 10n100 40 a pulse width limited by t jm 12n100 48 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , -di/dt = 100 a/ s, v r = 100 v 1000 ns ixth 10 n100 ixth 12 n100 ixtm 10 n100 ixtm 12 n100 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad (ixth) outline terminals: 1 - gate 2 - drain 3 - source tab - drain dim. millimeter inches min. max. min. max. a 6.4 11.4 .250 .450 a1 3.42 .135 ? b .97 1.09 .038 .043 ? d 22.22 .875 e 10.67 11.17 .420 .440 e1 5.21 5.71 .205 .225 l 7.93 .312 ? p 3.84 4.19 .151 .165 ? p1 3.84 4.19 .151 .165 q 30.15 bsc 1.187 bsc r 13.33 .525 r1 4.77 .188 s 16.64 17.14 .655 .675 to-204aa (ixtm) outline pins 1 - gate 2 - source case - drain 1 2 3 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4 ? 2000 ixys all rights reserved ixth 10 n100 ixth 12 n100 ixtm 10 n100 ixtm 12 n100 t j - degrees c -50 -25 0 25 50 75 100 125 150 bv/v g(th) - normalized 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 bv dss v gs(th) t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 2 4 6 8 10 12 14 16 18 20 10n100 t j - degrees c -50 -25 0 25 50 75 100 125 150 r ds(on) - normalized 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i d - amperes 0 5 10 15 20 25 r ds(on) - normalized 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v gs = 10v v gs - volts 012345678910 i d - amperes 0 2 4 6 8 10 12 14 16 18 20 v ds - volts 0 5 10 15 20 i d - amperes 0 2 4 6 8 10 12 14 16 18 20 6v 7v v gs = 10v 12n100 i d = 6a v gs = 15v 5v t j = 25 c t j = 25 c t j = 25 c fig. 1 output characteristics fig. 2 input admittance fig. 3 r ds(on) vs. drain current fig. 4 temperature dependence of drain to source resistance fig. 5 drain current vs. fig. 6 temperature dependence of case temperature breakdown and threshold voltage
4 - 4 ? 2000 ixys all rights reserved ixth 10 n100 ixth 12 n100 ixtm 10 n100 ixtm 12 n100 fig.7 gate charge characteristic curve fig.8 forward bias safe operating area fig.11 transient thermal impedance fig.9 capacitance curves fig.10 source current vs. source to drain voltage v ds - volts 1 10 100 1000 i d - amperes 0.1 1 10 gate charge - ncoulombs 0 255075100125150 v gs - volts 0 1 2 3 4 5 6 7 8 9 10 v sd - volts 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d - amperes 0 2 4 6 8 10 12 14 16 18 20 v ds - volts 0 5 10 15 20 capacitance - pf 0 500 1000 1500 2000 2500 3000 3500 4000 4500 time - seconds 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal response - k/w 0.001 0.01 0.1 1 d=0.5 c rss c oss 10s 100s 1ms 10ms 100ms c iss limited by r ds(on) v ds = 500v i d = 6a i g = 10ma single pulse f = 1mhz v ds = 25v t j = 125 c t j = 25 c d=0.2 d=0.1 d=0.05 d=0.01 d=0.02
|
